Transparent and Flexible In2O3 Thin Film for Multilevel Nonvolatile Photomemory Programmed by Light

被引:24
作者
Abbas, Sohail [1 ,2 ]
Kumar, Mohit [1 ,2 ]
Ban, Dong-Kyun [1 ,2 ]
Yun, Ju-Hyung [1 ,2 ]
Kim, Joondong [1 ,2 ]
机构
[1] Incheon Natl Univ, Dept Elect Engn, MCIFE, 119 Acad Rd, Incheon 22012, South Korea
[2] Incheon Natl Univ, PEDAL, MCIFE, 119 Acad Rd, Incheon 22012, South Korea
关键词
photomemory; multibit; programmable; nonvolatile; transparent and flexible; photoelectric devices; OPTICAL-PROPERTIES;
D O I
10.1021/acsaelm.8b00139
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The optically triggered data processing and storage provides an interesting arena for developing sophisticated next-generation smart windows and computation technology. So far, transparent and flexible metal oxides have shown phenomenal optoelectronic applications. In this article, we report a photomemory of In2O3 thin film deposited on glass and PET substrate using a large-scale sputtering system. The electrical characterization of a device under light and dark conditions reveals vast persistent photoconductivity (PPC) at room temperature. The PPC is systematically exploited for multibit data storage by programming with photon pulse, intensity, and source-to-drain voltage. Similarly, a high degree of persistence (>10(4) s) is achieved to retain optical information. The underlying working mechanism is attributed to the trapping of photogenerated electrons by oxygen vacancies, while corresponding holes freely participate in electrical transport even after light termination. Finally, the energy band diagram is proposed using the In2O3 function (4.26 eV measured with KPFM) and bandgap. The functional use of a transparent thin film may provide a solution of the complex multilevel programming architecture. This flexible and lightweight device can be applied in smart transparent electronics, including memories, photodetectors, and solar cells.
引用
收藏
页码:437 / +
页数:13
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