High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

被引：14

作者：

Choi, Sung-Jin ^{[1
]}

Han, Jin-Woo ^{[1
]}

Kim, Sungho ^{[1
]}

Moon, Dong-Il ^{[1
]}

Jang, Moongyu ^{[2
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] ETRI, Taejon 305700, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 03期

关键词：

Dopant-segregated Schottky barrier (DSSB); dopant segregation (DS); high performance; MOSFET; Ni silicide; Schottky barrier (SB); thin body; thin-film transistors (TFTs); POLY-SI; TECHNOLOGY; TRANSISTOR; FILMS;

D O I：

10.1109/LED.2009.2038348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.

引用

页码：228 / 230

页数：3

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