High-frequency microwave characteristics of HBTs

被引：0

作者：

Chiu, SY ^{[1
]}

Anwar, AFM ^{[1
]}

机构：

[1] Univ Connecticut, Dept Elect & Syst Engn, Storrs, CT 06269 USA

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analysis of the frequency dependence of the unilateral gain, maximum stable gain, maximum available gain, and current gain in heterojuction bipolar transistors is reported Small-signal HBT equivalent circuit is obtained from a physics-based model that includes partitioning of the total current into thermionic and tunneling components as well as non-stationary transport in the base region. Theoretical results in HBTs are compared to measured data and show good agreement.

引用

页码：546 / 549

页数：4

共 9 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].

ASBECK, PM ;

CHANG, MF ;

WANG, KC ;

MILLER, DL ;

SULLIVAN, GJ ;

SHENG, NH ;

SOVERO, E ;

HIGGINS, JA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) :1462-1470

[2]

CHIU SY, 1999, IN PRESS SEMICONDUCT

[3]

CHIU SY, IN PRESS IEEE ELECT

[4] HIGH-PERFORMANCE LOW-BASE-COLLECTOR CAPACITANCE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY DEEP ION-IMPLANTATION [J].

HO, MC ;

JOHNSON, RA ;

HO, WJ ;

CHANG, MF ;

ASBECK, PM .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (11) :512-514

[5] An exact current partitioning and its effect on base transit time in double heterojunction bipolar transistors [J].

Jahan, MM ;

Anwar, AFM .

SOLID-STATE ELECTRONICS, 1996, 39 (06) :941-948

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[7] HIGH-EFFICIENCY OPERATION OF ALGAAS/GAAS POWER HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW COLLECTOR SUPPLY VOLTAGE [J].

MATSUOKA, Y ;

YAMAHATA, S ;

NAKATSUGAWA, M ;

MURAGUCHI, M ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1993, 29 (11) :982-984

[8] HIGH-F(MAX) ALGAAS/INGAAS AND ALGAAS/GAAS HBTS WITH P(+)/P REGROWN BASE CONTACTS [J].

SHIMAWAKI, H ;

AMAMIYA, Y ;

FURUHATA, N ;

HONJO, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (10) :1735-1744

[9] FREQUENCY-DEPENDENCE OF THE UNILATERAL GAIN IN BIPOLAR-TRANSISTORS [J].

TIWARI, S .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :574-576

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