Integrating a Charge Trapping Layer in Passivated Emitter Rear Contact Cell to Enhance Efficiency

被引:1
作者
Yang, Chih-Cheng [1 ]
Chiang, Hsiao-Cheng [1 ]
Chen, Po-Hsun [2 ]
Su, Yu-Ting [2 ]
Su, Wan-Ching [1 ]
Lin, Chun-Chu [1 ,5 ]
Huang, Shin-Ping [3 ]
Zheng, Hao-Xuan [2 ]
Huang, Hui-Chun [1 ]
Chen, Sung-Yu [4 ]
Lin, Chao-Cheng
Huang, Jen-Wei [6 ]
Tsai, Tsung-Ming [1 ]
Chang, Ting-Chang [2 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan
[4] Ind Technol Res Inst, Green Energy & Environm Res Lab, Hsinchu 300, Taiwan
[5] Natl Appl Res Labs, Natl Nano Device Labs, Hsinchu 300, Taiwan
[6] Mil Acad, Dept Phys, Kaohsiung 800, Taiwan
关键词
Passivated emitter rear contact (PERC); charge trapping layer; solar cell; SiNx; passivation layer; SILICON SOLAR-CELLS; PERC; PERFORMANCE; DEPOSITION;
D O I
10.1109/LED.2018.2841038
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we propose a charge trapping technique to enhance passivated emitter rear contact solar cell efficiency without changing the fabrication process. We trap the charge by applying voltage to the rear contact between the SiNx passivation layer and Si substrate with specialmetal screen printing. Furthermore, different charge voltages were applied for IV curve, fill factor, efficiency, and series resistance comparisons. The IV curve was measured with white light, with results showing that the fill factor and efficiency increase and series resistance decrease with an increase in charge voltage. Finally, amodelwas proposed to explain the charge trapping effect in the passivation layer.
引用
收藏
页码:983 / 986
页数:4
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