Effects of individual layer thickness on the structure and electrical properties of sol-gel-derived Ba0.8Sr0.2TiO3 thin films

被引:0
|
作者
Cheng, JG [1 ]
Meng, XJ
Tang, J
Guo, SL
Chu, JH
Wang, M
Wang, H
Wang, Z
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Shandong Univ, Natl Lab Crystal Mat, Jinan 250100, Peoples R China
关键词
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暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ba0.8Sr0.2TiO3 thin films were prepared with various individual layer thicknesses using a sol-gel process, The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films, The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature-independent dielectric constant, and no ferroelectricity, The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good ferroelectricity, and two dielectric peaks in the dielectric constant-temperature curve. The individual layer thickness for layer-by-layer homoepitaxy growth that resulted in columnar grains was <20 nm.
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页码:2616 / 2618
页数:3
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