Dielectric characterization and microstructures of Pr6O11-doped Bi4Ti3O12 thin films

Pr6O11-doped bismuth titanate and random oriented BixPryTi3O12 (y=0.3, 0.6, 0.9, 1.2) thin films were fabricated on Pt/Ti/SiO2/Si Substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Pr doping into BIT caused a shift of the Curie temperature (T-C) of the BIT from 675 degrees C to 578, 517, 398, and 315 degrees C for the films with y=0.3, 0.6, 0.9, and 1.2, respectively. The experimental results indicated that Pr doping into BIT result in a remarkable improvement in dielectric properties. Raman analysis shows that Pr3+ and Pr4+ ions substitution only appears in A-sit.