n-type delta-doped strained quantum well lasers for improved temperature-dependent performance

被引：13
作者：
Buchinsky, O
Blumin, M
Fekete, D
机构：
[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 12期
关键词：
D O I：
10.1063/1.120599
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is demonstrated that the incorporation of Te n-type delta doping close to a single-strained InGaAs/GaAs quantum well improves the temperature stability of the laser, as indicated by the higher characteristic temperature and by the reduced sensitivity of the threshold current to temperature variations. This improvement results from the strong coupling between the quantum well and the delta-doping well. (C) 1998 American Institute of Physics.
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页码：1484 / 1486
页数：3
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