Electron wave-function spillover in self-assembled InAs/InP quantum wires -: art. no. 155311

被引:44
作者
Maes, J
Hayne, M
Sidor, Y
Partoens, B
Peeters, FM
González, Y
González, L
Fuster, D
García, JM
Moshchalkov, VV
机构
[1] Katholieke Univ Leuven, Pulsed Field Grp, Lab Solid State Phys & Magnetism, B-3001 Louvain, Belgium
[2] Univ Antwerp, Dept Natuurkunde, B-2610 Antwerp, Belgium
[3] CSIC, CNM, Inst Microelect Madrid, Madrid 28760, Spain
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 15期
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevB.70.155311
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Charge confinement in InAs/InP self-assembled quantum wires is studied experimentally using photoluminescence in pulsed magnetic fields and theoretically using adiabatic theory within the effective-mass approximation, taking into account the strain in the samples. We show both experimentally and theoretically that, in spite of the large conduction band offset, the electron wave function is significantly spilled out of the wire in the wire height direction for thin wires. Furthermore, for a wire thickness of up to 8 monolayers, the electron spillover is inversely related to the wire height. These effects are due to the large zero point energy of the electron. As the wire becomes thicker, the decrease in confinement energy is reflected in a reduction of the electron wave-function extent.
引用
收藏
页码:155311 / 1
页数:7
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