Effect of local surface potential distribution on its relaxation in polycrystalline ferroelectric films

被引：25

作者：

Kim, Yunseok ^{[1
]}

Park, Moonkyu ^{[1
]}

Buehlmann, Simon ^{[2
,4
]}

Hong, Seungbum ^{[3
]}

Kim, Yong Kwan ^{[2
]}

Ko, Hyoungsoo ^{[2
]}

Kim, Jiyoon ^{[1
]}

No, Kwangsoo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea

[3] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[4] Imperial Coll London, Kensington SW7 2AZ, England

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 05期

关键词：

THIN-FILMS; CHARGE;

D O I：

10.1063/1.3290953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effect of local surface potential distribution on its relaxation in the polycrystalline ferroelectric thin films. A lower surface potential region, i.e., potential pit, is generated near a grain boundary. The deep potential pit has a faster relaxation than the area far away from the potential pit due to the acceleration of the screen charge draining near the grain boundary and the domains formed by applying higher voltage have a faster relaxation due to the larger gradient of screen charge distribution. In addition, the surface potential and its relaxation depend on the sign of applying voltage. The result shows that the surface potential distribution may influence significantly to the reliability of bit signal on the memory devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3290953]

引用

页数：5

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