High-Q X-band and K-band micromachined spiral inductors for use in Si-based integrated circuits

被引：18

作者：

Lu, LH ^{[1
]}

Ponchak, GE ^{[1
]}

Bhattacharya, P ^{[1
]}

Katehi, LPB ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/SMIC.2000.844310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters are measured to characterize the performance of the inductors. With an etch depth of 20 mu m, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe/Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.

引用

页码：108 / 112

页数：5

共 22 条

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