A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μm2 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS

被引：26

作者：

Kulkarni, Sarvesh H. ^{[1
]}

Chen, Zhanping ^{[1
]}

He, Jun ^{[1
]}

Jiang, Lei ^{[1
]}

Pedersen, M. Brian ^{[1
]}

Zhang, Kevin ^{[1
]}

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2010年 / 45卷 / 04期

关键词：

High-density PROM; metal fuse; one-time-programmable ROM (OTP-ROM);

D O I：

10.1109/JSSC.2010.2040115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 4 kb high-density PROM array featuring the first high-volume manufacturable metal-fuse technology in 32 nm high-k metal-gate CMOS is introduced. In contrast to traditional salicided polysilicon based 2-D fuse cells, the metal-fuse technology enables a 3-D cell topology with program device and fuse element stacked on each other, achieving a 1.37 mu m(2) cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5 V and provides multi-bit programming capability. Programming success using a 2 V-1 mu s pulse condition is demonstrated. The technology is scalable and maintains full compatibility with modern high-k metal-gate processes.

引用

页码：863 / 868

页数：6

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