Novel organosiloxane vapor annealing process for improving properties of porous low-k films

被引：28

作者：

Kohmura, K. ^{[1
]}

Tanaka, H.

Oike, S.

Murakami, M.

Fujii, N.

Takada, S.

Ono, T.

Seino, Y.

Kikkawa, T.

机构：

[1] Assoc Super Adv Elect Technol, ASET, MIRAI, Tsukuba 3058569, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Semicond Res Ctr, MIRAI, Tsukuba 3058569, Japan

[3] Hiroshima Univ, Res Ctr Nanodevices & Syst, Hiroshima 7398527, Japan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 12期

关键词：

porous silica film; dielectric properties; mechanical properties; silylation;

D O I：

10.1016/j.tsf.2006.10.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS)-vapor annealing method was developed for improving the mechanical strength of porous silica films with a low dielectric constant. TMCTS molecules react with Si-OH groups on the pore wall surfaces to form the polymer network which results in the high hydrophobicity and reinforcement of the silica wall. This method can be used to recover plasma damages induced by etching and ashing in fabricating Cu/low-k interconnects. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：5019 / 5024

页数：6

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