2W high brightness semiconductor lasers with Bragg-grating filtering

被引：0

作者：

Paschke, K ^{[1
]}

Güther, R ^{[1
]}

Fricke, J ^{[1
]}

Sebastian, M ^{[1
]}

Erbert, G ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, Berlin, Germany

来源：

PHOTONICS, DEVICES, AND SYSTEMS II | 2003年 / 5036卷

关键词：

Bragg grating; semiconductor laser; high brightness;

D O I：

10.1117/12.498241

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present angled-gating distributed feedback lasers (alpha-DFB lasers) with high beam quality and high output power of several Watts at the wavelength lambda = 1060 nm. The spatial and spectral single mode emission of such lasers is achieved by a filtering mechanism due to repeated Bragg reflections at an angled gating. The influence of slant angle, coupling coefficient, electrode stripe width, length of the resonator, vertical wave guide structure, and facet coating were studied. For optimised structures we obtained a nearly diffraction limited beam with an output power of more than 1 W, a lateral far field divergence angle of 0.3degrees, a beam quality factor M-2 = 1.1 (M-2 = 3.2 @ 2.1 W), and a spectral line width less than 5.8 pm with 28 dB side mode suppression ratio.

引用

页码：37 / 44

页数：8

共 28 条

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