HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

被引：209

作者：

Yue, Ruoyu ^{[1
]}

Barton, Adam T. ^{[1
]}

Zhu, Hui ^{[1
]}

Azcatl, Angelica ^{[1
]}

Pena, Luis F. ^{[1
]}

Wang, Jian ^{[1
]}

Peng, Xin ^{[1
]}

Lu, Ning ^{[1
]}

Cheng, Lanxia ^{[1
]}

Addou, Rafik ^{[1
]}

McDonnell, Stephen ^{[1
]}

Colombo, Luigi ^{[2
]}

Hsu, Julia W. P. ^{[1
]}

Kim, Jiyoung ^{[1
]}

Kim, Moon J. ^{[1
]}

Wallace, Robert M. ^{[1
]}

Hinkle, Christopher L. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

ACS NANO | 2015年 / 9卷 / 01期

基金：

美国国家科学基金会;

关键词：

hafnium diselenide; van der Waals epitaxy; heterostructure; transition metal dichalcogenides; tunnel field-effect transistors; DER-WAALS EPITAXY; ZRSE2;

D O I：

10.1021/nn5056496

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates used, followed by flat, 2D layers with octahedral (1T) coordination. The resulting HfSe2 is slightly n-type with an indirect band gap of similar to 1.1 eV and a measured energy band alignment significantly different from recent DFT calculations. These results demonstrate the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronic and optoelectronic applications.

引用

页码：474 / 480

页数：7

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