Electrical and optical properties of Nb-doped TiO2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO2-x ceramic targets

被引:32
作者
Sato, Yasushi [1 ]
Sanno, Yuta [1 ]
Tasaki, Chihiro [1 ]
Oka, Nobuto [1 ]
Kamiyama, Toshihisa [2 ]
Shigesato, Yuzo [1 ]
机构
[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Kanagawa 2298558, Japan
[2] AGC Ceram Co Ltd, Takasago, Hyogo 6768655, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2010年 / 28卷 / 04期
关键词
IN2O3; FILMS;
D O I
10.1116/1.3358153
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nb-doped anatase TiO2 films were deposited on unheated glass by dc magnetron sputtering using slightly reduced Nb-doped TiO2-x targets (Nb concentration: 3.7 and 9.5 at. %) with various hydrogen or oxygen flow ratios. After postannealing in a vacuum (6 x 10(-4) Pa) at 500 degrees C for 1 h, both films were crystallized into the polycrystalline anatase TiO2 structure. The resistivity decreased from 1.6 X 10(-3) to 6.3 X 10(-4) Omega cm with increasing Nb concentration from 2.8 to 8.0 at. %, where the carrier density increased from 5.4 X 10(20) to 2.0 X 10(21) cm(-3) and the Hall mobility was almost constant at 5-7 cm(2) V-1 s(-1). The films exhibited a high transparency of over 60%-80% in the visible region. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3358153]
引用
收藏
页码:851 / 855
页数:5
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