Indium inhomogeneity in InxGa1-xSb ternary crystals grown by floating crucible Czochralski method

被引：17

作者：

Kozhemyakin, GN ^{[1
]}

机构：

[1] Eastern Ukrainian State Univ, Dept Elect, UA-91034 Lugansk, Ukraine

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 1-2期

关键词：

Czochralski method; InxGa1-xSb crystals; distribution coefficients; In compositional profiles; floating crucible;

D O I：

10.1016/S0022-0248(00)00756-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The distribution coefficients and the activity coefficients of In and Ga were calculated and used for growing InxGa1-xSb crystals with x = 0.01 - 0.10. The In compositional profiles were investigated by EPMA measurements along and across the section of crystals grown by Czochralski method. A floating crucible method has been developed to grow homogeneous InxGa1-xSb crystals. By growing In0.01Ga0.98Sb crystals from In-Ga-Sb solution in an inner crucible floating in Sb-rich Ga-Sb melt the In compositional profiles were improved. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：39 / 45

页数：7

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