Large area tunnel oxide passivated rear contact n-type Si solar cells with 21.2% efficiency

被引：75
作者：
Tao, Yuguo [1 ]
Upadhyaya, Vijaykumar [1 ]
Chen, Chia-Wei [1 ]
Payne, Adam [2 ]
Chang, Elizabeth Lori [1 ]
Upadhyaya, Ajay [1 ]
Rohatgi, Ajeet [1 ,2 ]
机构：
[1] Georgia Inst Technol, 777 Atlantic Dr, Atlanta, GA 30332 USA
[2] Suniva Inc, 5765 Peachtree Ind Blvd, Norcross, GA 30092 USA
来源：
PROGRESS IN PHOTOVOLTAICS | 2016年 / 24卷 / 06期
关键词：
tunnel oxide; passivated contact; room temperature; large area; n-type Cz wafer; screen-printed; ELECTRON;
D O I：
10.1002/pip.2739
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25 degrees C) and capped with n(+) polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iV(oc) of 714mV and saturation current density J(ob)' of 10.3 fA/cm(2) for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm(2) commercial grade n-type Czochralski wafers. Copyright (C) 2016 John Wiley & Sons, Ltd.
引用
收藏
页码：830 / 835
页数：6
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