A 3mW continuous-time ΣΔ-modulator for EDGE/GSM with high adjacent channel tolerance

被引：18

作者：

Schimper, M ^{[1
]}

Dörrer, L ^{[1
]}

Riccio, E ^{[1
]}

Panov, G ^{[1
]}

机构：

[1] Infineon Technol AG, Munich, Germany

来源：

ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSCIR.2004.1356648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A continuous-time 4th-order multi-bit SigmaDelta-modulator for GSM/EDGE is presented. By introduction of a direct feed-forward path from the input to the quantiser, high immunity to adjacent channel interferers is achieved. Dynamic range is 90dB (> 14-bit) over a 240 kHz signal bandwidth. Accurate modelling allows optimisation of excess loop delay, thus yielding a very low power consumption of 3 mW at 1.25 V supply voltage. The modulator is clocked at 26 MHz (OSR = 54). It occupies 0.5 mm(2) in a 0.13 mum CMOS technology.

引用

页码：183 / 186

页数：4

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