Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy

被引：18

作者：

Koike, Kazuto ^{[1
]}

Harada, Hisashi

Itakura, Tomoyuki

Yano, Mitsuaki

Heiss, Wolfgang

Groiss, Heiko

Kaufmann, Erich

Hesser, Gunter

Schaeffler, Friedrich

机构：

[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Asahi Ku, Osaka 5358585, Japan

[2] Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Austria

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / 722-725期

基金：

奥地利科学基金会;

关键词：

photoluminescence; molecular beam epitaxy; quantum dots; CdTe; PbTe;

D O I：

10.1016/j.jcrysgro.2006.11.115

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper describes molecular beam epitaxial growth and photoluminescence (PL) properties of PbTe quantum wells (QWs) and quantum dots (QDs) in CdTe matrix. Cross-sectional observation by atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM) revealed that the PbTe epitaxy mode on CdTe(1 0 0) turned from a conventional two-dimensional (2D) QW-growth at 220 degrees C to a highly isotropic QD-growth at 280 degrees C by minimizing the interface energy between rocksalt PbTe and zincblende CdTe. Although both the QWs and QDs can emit mid-infrared PL, the emission from QDs was much stronger and observed even at higher temperatures over 400 K. Below 120 K, however, this intense emission from QDs became low due to the band-alignment change from type-I to type-II by the thermal mismatch between PbTe and CdTe. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：722 / 725

页数：4

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