LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs

被引：5

作者：

Maneux, C. ^{[1
]}

Grandchamp, B. ^{[1
]}

Labat, N. ^{[1
]}

Touboul, A. ^{[1
]}

Riet, M. ^{[2
]}

Godin, J. ^{[2
]}

Bove, Ph. ^{[3
]}

机构：

[1] Univ Bordeaux 1, CNRS, UMR 5818, IXL, 351 Cours Liberat, F-33405 Talence, France

[2] ALCATEL, THALES Lab 3 5, F-91461 Marcoussis, France

[3] PICOGIA Int SAS, F-91971 Courtaboeuf, France

来源：

2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

InPHBT; low noise measurements;

D O I：

10.1109/EMICC.2006.282684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP BET one. Extraction of the pre-eminent current noise source, Si-B occurring at the emitter-base junction area is realized. The 1/f noise is considered as a technological figure-of-merit and lorentzian shape noise is investigated.

引用

页码：468 / +

页数：2

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