Optical and electrical investigation of Ar+-irradiated GaN

被引：5

作者：

Chen, Miao-Gen ^{[1
,2
]}

Nakamura, Keiji ^{[2
]}

Qiu, Yan-Qing ^{[1
]}

Ogawa, Daisuke ^{[2
]}

Kawakami, Retsuo ^{[3
]}

Niibe, Masahito ^{[4
]}

Nakano, Yoshitaka ^{[2
]}

机构：

[1] China Jiliang Univ, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China

[2] Chubu Univ, Coll Engn, Kasugai, Aichi 4878501, Japan

[3] Univ Tokushima, Inst Socio Techno Sci Technol, Tokushima 7708506, Japan

[4] Univ Hyogo, Lab Adv Sci & Technol Ind, Kamigori, Hyogo 6781205, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 11期

基金：

中国国家自然科学基金;

关键词：

PLASMA-INDUCED DEFECTS; N-TYPE GAN; CARBON; LUMINESCENCE; TRANSISTORS; IMPACT;

D O I：

10.7567/APEX.7.111003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The generation behavior of deep-level defects in Ar+-irradiated GaN has been investigated by photoluminescence, capacitance-voltage, and photocapacitance techniques. Ar+ irradiation induces a significant increase in near-band edge emission peak intensity due to donor-bound excitons, in agreement with the largely increased effective carrier concentration in a shallow-lying region near the surface. More interestingly, with increasing irradiation time, the carrier concentration tends to decrease in a deep-lying region, compared with that in the inner bulk region, which is considered to stem from carrier trapping and/or carrier compensation via the diffusion and formation of acceptor-type deep-level defects, such as Ga vacancies and residual C. (C) 2014 The Japan Society of Applied Physics

引用

页数：3

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