Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

被引：12
|
作者：
Yazawa, Y [1 ]
Tamura, K [1 ]
Watahiki, S [1 ]
Kitatani, T [1 ]
Ohtsuka, H [1 ]
Warabisako, T [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 185, Japan
来源：
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年
关键词：
D O I：
10.1109/PVSC.1997.654232
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.
引用
收藏
页码：899 / 902
页数：4
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