Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition

被引：0

作者：

Vandana ^{[1
]}

Batra, Neha ^{[1
]}

Gope, Jhuma ^{[1
]}

Rauthan, C. M. S. ^{[1
]}

Sharma, Mukul ^{[1
]}

Srivastava, Ritu ^{[1
]}

Srivastava, S. K. ^{[1
]}

Pathi, P. ^{[1
]}

Singh, P. K. ^{[1
]}

机构：

[1] CSIR Natl Phys Lab, Silicon Solar Cell Grp, NISE, New Delhi 110012, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

Passivation; Al2O3; ALD; BINARY REACTION SEQUENCE; CHEMISTRY;

D O I：

10.1007/978-3-319-03002-9_97

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon surface passivation is studied using Al2O3 thin film deposited by thermal process using atomic layer deposition (ALD) method. Minority carrier lifetime measurements showed that the film passivate the silicon surface effectively. Capacitancevoltage measurement confirms the activation of negative fixed charges after sintering at 400 degrees C.

引用

页码：387 / 390

页数：4

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