A New Materials Concept for High Performance Organic Thin Film Transistors

被引:3
作者
Iino, Hiroaki [1 ]
Kunii, Masafumi [1 ]
Hanna, Jun-ichi [1 ]
机构
[1] Tokyo Inst Technol, Imaging Sci & Engn Res Ctr D, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan
来源
THIN FILM TRANSISTORS 13 (TFT 13) | 2016年 / 75卷 / 10期
基金
日本科学技术振兴机构;
关键词
FIELD-EFFECT TRANSISTORS; LIQUID-CRYSTALS; HIGH-MOBILITY; AIR;
D O I
10.1149/07510.0069ecst
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have established a new materials concept for organic field effect transistors (OFETs) solution-processed, i.e., utilization of highly ordered smectic liquid crystals, which exhibit self-organization and solid-like nature, in order to solve the problems such as film uniformity and thermal durability in small molecule OFET materials. 2-Phenyl-7-decyl-benzothieno[3,2-b][1] benzothiophene (Ph-BTBT-10) exhibiting SmE phase was designed and synthesized to apply OFETs. Bottom-gate and bottom-contact OFETs fabricated with its polycrystalline thin films exhibited high mobility of over 10cm(2)/Vs with its small variation from device to device and high thermal durability up to 200 degrees C. In addition, we succeeded in operating the OFETs at a few volt with a low-dielectric gate insulator material of SiO2.
引用
收藏
页码:69 / 75
页数:7
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