Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well

被引：0
|
作者：
Qiu, ZJ [1 ]
Gui, YS
Cui, LJ
Zeng, YP
Huang, ZM
Shu, XZ
Dai, N
Guo, SL
Chu, JH
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2004年 / 23卷 / 05期
关键词：
InGaAs/InAlAs quantum well; magneto-transport; symmetric state; antisymmetric state;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.
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页码：329 / 332
页数：4
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