Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

被引：2

作者：

Al-Ajmi, F. S. ^{[1
]}

Kolbas, R. M.

Roberts, J. C.

Rajagopal, P.

Cook, J. W., Jr.

Piner, E. L.

Linthicum, K. J.

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] Nitronex Corp, Raleigh, NC 27606 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期

关键词：

D O I：

10.1063/1.2722201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature stimulated emission and laser action with well developed longitudinal optical modes from high-quality GaN films grown on silicon substrates by metal-organic chemical-vapor deposition are presented. Laser action with well developed Fabry-Perot modes involving the A, B, and C bands was observed. Stimulated emission one exciton below the A band and the B band and one longitudinal optical phonon below the B band was also observed. The effective index of refraction during laser operation was measured to be 2.9. (c) 2007 American Institute of Physics.

引用

页数：3

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