Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

被引：2
作者：
Al-Ajmi, F. S. [1 ]
Kolbas, R. M.
Roberts, J. C.
Rajagopal, P.
Cook, J. W., Jr.
Piner, E. L.
Linthicum, K. J.
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[2] Nitronex Corp, Raleigh, NC 27606 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期
关键词：
D O I：
10.1063/1.2722201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room temperature stimulated emission and laser action with well developed longitudinal optical modes from high-quality GaN films grown on silicon substrates by metal-organic chemical-vapor deposition are presented. Laser action with well developed Fabry-Perot modes involving the A, B, and C bands was observed. Stimulated emission one exciton below the A band and the B band and one longitudinal optical phonon below the B band was also observed. The effective index of refraction during laser operation was measured to be 2.9. (c) 2007 American Institute of Physics.
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页数：3
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