Low-dark-current waveguide InGaAs metal-semiconductor-metal photodetector monolithically integrated with InP grating coupler on III-V CMOS photonics platform

被引：6
作者：
Cheng, Yongpeng [1 ,2 ]
Ikku, Yuki [1 ,2 ]
Takenaka, Mitsuru [1 ,2 ]
Takagi, Shinichi [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1130032, Japan
[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020076, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
BARRIER-ENHANCEMENT LAYER; SILICON PHOTONICS; HIGH-SPEED;
D O I：
10.7567/JJAP.55.04EH01
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The fabrication of waveguide InGaAs metal-semiconductor-metal (MSM) photodetector (PD) monolithically integrated with an InP grating coupler has been demonstrated using the III-V CMOS photonics platform. The grating coupler shows approximately 28% coupling efficiency, which allows wafer-scale testing with better coupling and alignment tolerance than edge-fire coupling. The InGaAs PD with an InP/InAlAs Schottky barrier enhancement (SBE) layer exhibits a low dark current of 0.75 nA at 1 V bias. When the bias is 4 V, a responsivity of approximately 0.19 A/W with 3 nA dark current is achieved. The fabricated PD on a III-V-on-insulator wafer can be used for the fabrication of low-power receiver chips for optical interconnects. (C) 2016 The Japan Society of Applied Physics
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页数：4
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