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Mathematical Model to Study Vanadium Ion Crossover in an All-Vanadium Redox Flow Battery
被引:29
作者:
Chou, Yi-Sin
[1
]
Yen, Shi-Chern
[2
]
Arpornwichanop, Amornchai
[3
]
Singh, Bhupendra
[4
,5
]
Chen, Yong-Song
[4
,5
]
机构:
[1] Inst Nucl Energy Res, Chem Engn Div, Taoyuan 1000, Taiwan
[2] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
[3] Chulalongkorn Univ, Fac Engn, Ctr Excellence Proc & Energy Syst Engn, Dept Chem Engn, Bangkok 254, Thailand
[4] Natl Chung Cheng Univ, Dept Mech Engn, Minxiong Township 62102, Chiayi County, Taiwan
[5] Natl Chung Cheng Univ, Adv Inst Mfg High Tech Innovat, Minxiong Township 62102, Chiayi County, Taiwan
关键词:
All-vanadium redox flow battery;
Vanadium ion crossover;
Potential distribution;
Porous electrode;
Coulombic efficiency;
Overpotential;
GRAPHITE FELT;
TRANSPORT;
ELECTROLYTE;
PERFORMANCE;
ACID;
MEMBRANES;
CARBON;
CHARGE;
STATE;
CELL;
D O I:
10.1021/acssuschemeng.1c00233
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The performance of an all-vanadium redox flow battery (VRFB) is affected by many factors, among which the crossover of the vanadium ion through the ion-exchange membrane plays an important role in distribution of the electrolyte concentration along the flow direction. In this study, a mathematical isothermal model is developed to investigate the effect of crossover of the vanadium ion on distributions of the electrolyte concentration, activation overpotential profiles, and cell potential. The chemical reactions of redox reaction between different oxidation states of vanadium ions are included in this model. The model is validated by fitting the charging and discharging curves with experimental data. The concentration distributions of different vanadium ions with and without crossover effect are presented and compared. Results show that distributions of concentration and potential are more uniform due to the balance for VO2+ being generated from VO2+ and reduced by V2+. Moreover, the Coulombic efficiency of the VRFB is reduced from 0.971 to 0.892. The voltage is decreased by 0.05 V at the SOC of 0.5 due to vanadium ion crossover.
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页码:5377 / 5387
页数:11
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