Nonvolatile Logic and Memory Devices based on Spintronics

被引：0

作者：

Endoh, Tetsuo ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 980, Japan

来源：

2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2015年

关键词：

spintronics; magnetic tunnel junction; STT-MRAM; nonvolatile computer; power gating;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New computer memory hierarchy based on spintronics is proposed for low-power electronics that will evolve in two steps from the current volatile system. At first, memories for internal states and pipeline registers and cache memories etc. are made nonvolatile by using spintronics. Then, computers can be made totally nonvolatile by additionally adopting spintronicsbased logic-in-memory architecture. Nonvolatile MPU, recognition processor and cache memory that use magnetic tunnel junction (MTJ) have been designed and fabricated to demonstrate their superior features in low static power and high speed data store and restore operations.

引用

页码：13 / 16

页数：4

共 8 条

[1]

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[2]

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[3]

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[4]

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[5]

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[6]

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Koike, Hiroki ;

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (06) :1511-1520

[8] High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction [J].

Ohsawa, Takashi ;

Iga, Fumitaka ;

Ikeda, Shoji ;

Hanyu, Takahiro ;

Ohno, Hideo ;

Endoh, Tetsuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)

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