Structural, Electronic, and Optical Properties of Hexagonal XC6 (X=N, P, As, and Sb) Monolayers

被引:1
作者
Zhang, Wei [1 ]
Chai, Changchun [1 ]
Fan, Qingyang [2 ]
Song, Yanxing [1 ]
Yang, Yintang [1 ]
机构
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
[2] Xian Univ Architecture & Technol, Coll Informat & Control Engn, Xian 710071, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
2D materials; electronic and optical properties; first-principles calculations; IV– V compounds; photocatalytic water splitting; TOTAL-ENERGY CALCULATIONS; CARRIER MOBILITY; BAND-GAP; GRAPHENE; GRAPHDIYNE; STABILITY; TRANSPORT; MOS2; GEAS; C3N;
D O I
10.1002/cphc.202100055
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Based on first-principles calculations, a novel family of two-dimensional (2D) IV-V compounds, XC6 (X=N, P, As and Sb), is proposed. These compounds exhibit excellent stability, as determined from the cohesive energies, phonon dispersion analysis, ab initio molecular dynamics (AIMD) simulations, and mechanical properties. In this type of structure, the carbon atom is sp(2) hybridized, whereas the X (N, P, As and Sb) atom is nonplanar sp(3) hybridized with one 2p(z) orbital filled with lone pair electrons. NC6, PC6, AsC6 and SbC6 monolayers are intrinsic indirect semiconductors with wide bandgaps of 2.02, 2.36, 2.77, and 2.85 eV (based on HSE06 calculations), respectively. After applying mechanical strain, PC6, AsC6 and SbC6 monolayers can be transformed from indirect to direct semiconductors. The appropriate bandgaps and well-located band edge positions make XC6 monolayers potential materials for photocatalytic water splitting. XC6 family members also have high absorption coefficients (similar to 10(5) cm(-1)) in the ultraviolet region and higher electron mobilities (similar to 10(3) cm(2) V-1 s(-1)) than many known 2D semiconductors.
引用
收藏
页码:1124 / 1133
页数:10
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