An improved physically based compact c-v model for mos devices with HIGH-K gate dielectrics

An improved compact gate C-V model for MOS devices with high-k gate dielectrics is proposed. The model accurately includes the effect of wave function penetration into the gate dielectric. It is based on making lambda, the exponent of the Airy function solution of the eigenenergy, dependent on the characteristics of the dielectric material and on the substrate doping density. Comparison with experimental C-V data shows that the proposed model is more accurate than existing model which consider a constant value of lambda for all dielectric materials and doping densities.