Scaling junctionless multigate field-effect transistors by step-doping

被引：7
作者：
Song, Yi
Li, Xiuling [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 22期
基金：
美国国家科学基金会;
关键词：
NANOWIRE; MOSFETS;
D O I：
10.1063/1.4902864
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conventional junctionless (JL) multigate field-effect transistors (MuGFETs) use extremely scaled and highly doped fins as channels. Such small fins introduce large parasitic resistance as well as performance fluctuation due to fin width variations. The high channel doping significantly reduces bulk carrier mobility, which reduces on-state current and escalates short channel effect related leakage. In this letter, we present a step-doping scheme for the scaling of JL MuGFETs. By employing a two-step-doping profile, with the high doping side near the gate, higher threshold voltage and better off-state performance can be achieved, along with higher on-state current. This opens a route for threshold voltage design and addresses the design optimization for both on-state current and off-state leakage for JL MuGFETs. (C) 2014 AIP Publishing LLC.
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页数：3
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