Electro-optical phenomena accompanying electron and hole heating in superlattices and quantum wells GaAs/AlGaAs and Ge/GeSi

被引：2
|
作者：
Vorobjev, LE [1 ]
Danilov, SN
Zibik, EA
Firsov, DA
Shalygin, VA
Shik, AY
Saidashev, II
Aleshkin, VY
Kuznetsov, OA
Orlov, LK
机构：
[1] St Petersburg State Tech Univ, Dept Semicond Phys & Nanoelect, St Petersburg 195251, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 22卷 / 04期
关键词：
light absorption; birefringence; hot electrons; GaAs/AlGaAs; Ge/GeSi;
D O I：
10.1006/spmi.1996.0307
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
New electro-optical phenomena in quantum-well structures, i.e. modulation of the light absorption and birefringence due to carrier heating in a strong electric field, have been investigated. The effects have revealed different features in the three types of structures under investigation, namely: (1) well-doped n-type GaAs/AlGaAs multiple quantum wells, (2) barrier-doped n-type GaAs/AlGaAs superlattices and (3) barrier-doped p-type Ge/GeSi multiple quantum wells. Possible mechanisms of the phenomena have been discussed. (C) 1997 Academic Press Limited.
引用
收藏
页码：467 / 473
页数：7
相关论文
共 45 条
  • [21] Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells
    牛秉慧
    闫腾飞
    倪海桥
    牛智川
    张新惠
    Chinese Physics Letters, 2016, 33 (10) : 124 - 127
  • [22] Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells
    Niu, Bing-Hui
    Yan, Teng-Fei
    Ni, Hai-Qiao
    Niu, Zhi-Chuan
    Zhang, Xin-Hui
    CHINESE PHYSICS LETTERS, 2016, 33 (10)
  • [23] Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices
    Pusep, YA
    Guimaraes, FEG
    Ribeiro, MB
    Arakaki, H
    de Souza, CA
    Malzer, S
    Döhler, GH
    Physics of Semiconductors, Pts A and B, 2005, 772 : 959 - 960
  • [24] Resonant Raman scattering in GaAs/AlGaAs quantum wells modulated by microwave irradiation and by electron-hole photogeneration
    Ashkinadze, BM
    Linder, E
    Cohen, E
    Ron, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1997, 164 (01): : 231 - 234
  • [25] 2-DIMENSIONAL ELECTRON-HOLE PAIR DIFFUSIVITIES IN THIN GAAS/ALGAAS QUANTUM-WELLS
    HILLMER, H
    TU, CW
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (05): : 445 - 448
  • [26] Optical-microwave study of electron-exciton dynamics in undoped GaAs/AlGaAs quantum wells
    Technion-Israel Inst of Technology, Haifa, Israel
    J Lumin, (381-384):
  • [27] Optical-microwave study of electron-exciton dynamics in undoped GaAs/AlGaAs quantum wells
    Kozhevnikov, M
    Ashkinadze, BM
    Cohen, E
    Ron, A
    JOURNAL OF LUMINESCENCE, 1998, 76-7 : 381 - 384
  • [28] Thermally induced changes of the electro-optical properties of semi-insulating GaAs/AlGaAs multiple quantum well structures
    Miskiewicz, Eliza
    Ziolkowski, Andrzej
    Wichtowski, Marek
    Weinert-Raczka, Ewa
    OPTICAL MATERIALS, 2019, 89 : 231 - 236
  • [29] Carrier heating in quantum wells under optical and current injection of electron-hole pairs
    L. E. Vorobjev
    M. Ya. Vinnichenko
    D. A. Firsov
    V. L. Zerova
    V. Yu. Panevin
    A. N. Sofronov
    P. Thumrongsilapa
    V. M. Ustinov
    A. E. Zhukov
    A. P. Vasiljev
    L. Shterengas
    G. Kipshidze
    T. Hosoda
    G. Belenky
    Semiconductors, 2010, 44 : 1402 - 1405
  • [30] Carrier heating in quantum wells under optical and current injection of electron-hole pairs
    Vorobjev, L. E.
    Vinnichenko, M. Ya.
    Firsov, D. A.
    Zerova, V. L.
    Panevin, V. Yu.
    Sofronov, A. N.
    Thumrongsilapa, P.
    Ustinov, V. M.
    Zhukov, A. E.
    Vasiljev, A. P.
    Shterengas, L.
    Kipshidze, G.
    Hosoda, T.
    Belenky, G.
    SEMICONDUCTORS, 2010, 44 (11) : 1402 - 1405
12345