Electro-optical phenomena accompanying electron and hole heating in superlattices and quantum wells GaAs/AlGaAs and Ge/GeSi

被引：2
|
作者：
Vorobjev, LE [1 ]
Danilov, SN
Zibik, EA
Firsov, DA
Shalygin, VA
Shik, AY
Saidashev, II
Aleshkin, VY
Kuznetsov, OA
Orlov, LK
机构：
[1] St Petersburg State Tech Univ, Dept Semicond Phys & Nanoelect, St Petersburg 195251, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 22卷 / 04期
关键词：
light absorption; birefringence; hot electrons; GaAs/AlGaAs; Ge/GeSi;
D O I：
10.1006/spmi.1996.0307
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
New electro-optical phenomena in quantum-well structures, i.e. modulation of the light absorption and birefringence due to carrier heating in a strong electric field, have been investigated. The effects have revealed different features in the three types of structures under investigation, namely: (1) well-doped n-type GaAs/AlGaAs multiple quantum wells, (2) barrier-doped n-type GaAs/AlGaAs superlattices and (3) barrier-doped p-type Ge/GeSi multiple quantum wells. Possible mechanisms of the phenomena have been discussed. (C) 1997 Academic Press Limited.
引用
收藏
页码：467 / 473
页数：7
相关论文
共 45 条
  • [11] STUDY ON OPTICAL-PROPERTIES OF PLANAR MODULATION STRUCTURES OF ALGAAS GAAS SUPERLATTICES AND QUANTUM-WELLS
    XIE, YL
    CHENG, WQ
    HUANG, Y
    CHEN, ZH
    LU, ZD
    YANG, GZ
    GU, SJ
    ZHOU, JM
    SURFACE SCIENCE, 1990, 228 (1-3) : 403 - 407
  • [12] Electron-hole superlattices in GaAs/AlxGa1-xAs multiple quantum wells
    Walsh, K. P.
    Fiory, A. T.
    Ravindra, N. M.
    Harshman, D. R.
    Dow, J. D.
    PHILOSOPHICAL MAGAZINE, 2006, 86 (23) : 3581 - 3593
  • [13] Effect of electron-hole interaction on electron spin relaxation in GaAs/AlGaAs quantum wells at room temperature
    Gotoh, H
    Ando, H
    Sogawa, T
    Kamada, H
    Kagawa, T
    Iwamura, H
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) : 3394 - 3398
  • [14] AN OPTICAL STUDY OF THE LATERAL MOTION OF 2-DIMENSIONAL ELECTRON-HOLE PAIRS IN GAAS/ALGAAS QUANTUM-WELLS
    HILLMER, H
    FORCHEL, A
    TU, CW
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (31) : 5563 - 5580
  • [15] Effect of free electron-hole pairs on the saturation of excitonic absorption in GaAs/AlGaAs quantum wells
    Litvinenko, KL
    Lysenko, VG
    Hvam, IM
    PHYSICS OF THE SOLID STATE, 1998, 40 (06) : 1032 - 1034
  • [16] Effect of free electron-hole pairs on the saturation of excitonic absorption in GaAs/AlGaAs quantum wells
    K. L. Litvinenko
    V. G. Lysenko
    I. M. Hvam
    Physics of the Solid State, 1998, 40 : 1032 - 1034
  • [17] Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells
    Andrianov, A. V.
    Alekseev, P. S.
    Klimko, G. V.
    Ivanov, S. V.
    Shcheglov, V. L.
    Sedova, M. A.
    Zakhar'in, A. O.
    SEMICONDUCTORS, 2013, 47 (11) : 1433 - 1437
  • [18] Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells
    A. V. Andrianov
    P. S. Alekseev
    G. V. Klimko
    S. V. Ivanov
    V. L. Shcheglov
    M. A. Sedova
    A. O. Zakhar’in
    Semiconductors, 2013, 47 : 1433 - 1437
  • [19] Effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs/AlGaAs quantum wells
    Solid State Inst, Haifa, Israel
    Solid State Electron, 1-8 (561-565):
  • [20] The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs/AlGaAs quantum wells
    Ashkinadze, BM
    Cohen, E
    Ron, A
    Linder, E
    Pfeiffer, LN
    SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 561 - 565
12345