Electro-optical phenomena accompanying electron and hole heating in superlattices and quantum wells GaAs/AlGaAs and Ge/GeSi

被引：2
|
作者：
Vorobjev, LE [1 ]
Danilov, SN
Zibik, EA
Firsov, DA
Shalygin, VA
Shik, AY
Saidashev, II
Aleshkin, VY
Kuznetsov, OA
Orlov, LK
机构：
[1] St Petersburg State Tech Univ, Dept Semicond Phys & Nanoelect, St Petersburg 195251, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 22卷 / 04期
关键词：
light absorption; birefringence; hot electrons; GaAs/AlGaAs; Ge/GeSi;
D O I：
10.1006/spmi.1996.0307
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
New electro-optical phenomena in quantum-well structures, i.e. modulation of the light absorption and birefringence due to carrier heating in a strong electric field, have been investigated. The effects have revealed different features in the three types of structures under investigation, namely: (1) well-doped n-type GaAs/AlGaAs multiple quantum wells, (2) barrier-doped n-type GaAs/AlGaAs superlattices and (3) barrier-doped p-type Ge/GeSi multiple quantum wells. Possible mechanisms of the phenomena have been discussed. (C) 1997 Academic Press Limited.
引用
收藏
页码：467 / 473
页数：7
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