Evidence for excitonic polarons in InAs/GaAs quantum dots

被引：2
|
作者：
Preisler, V. [1 ]
Grange, T. [1 ]
Ferreira, R. [1 ]
de Vaulchier, L. A. [1 ]
Guldner, Y. [1 ]
Teran, F. J. [2 ]
Potemski, M. [2 ]
Lemaitre, A. [3 ]
机构：
[1] Ecole Normale Super, Lab Pierre Aigrain, 24 Rue Lhomond, F-75231 Paris 05, France
[2] CNRS, MPI, Grenoble High Magnet Field Lab, Grenoble 9, France
[3] Lab Photo Nanostruct, F-91460 Marcoussis, France
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期
关键词：
D O I：
10.1002/pssc.200671591
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton-LO phonon states is calculated using the Frohlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton-LO phonon states have close enough energies with phonon occupations which differ by one. A good agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3881 / +
页数：2
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