Realization of Ultra-Scaled MoS2 Vertical Diodes via Double-Side Electrodes Lamination

被引：30

作者：

Li, Wanying ^{[1
]}

Liu, Liting ^{[1
]}

Tao, Quanyang ^{[1
]}

Chen, Yang ^{[1
]}

Lu, Zheyi ^{[1
]}

Kong, Lingan ^{[1
]}

Dang, Weiqi ^{[2
]}

Zhang, Wujun ^{[3
]}

Li, Zhiwei ^{[1
]}

Li, Qianyuan ^{[1
]}

Tang, Jie ^{[1
]}

Ren, Liwang ^{[1
]}

Song, Wenjing ^{[1
]}

Duan, Xidong ^{[2
]}

Ma, Chao ^{[3
]}

Xiang, Yuanjiang ^{[1
]}

Liao, Lei ^{[1
]}

Liu, Yuan ^{[1
]}

机构：

[1] Hunan Univ, Sch Phys & Elect, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China

[2] Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China

[3] Hunan Univ, Coll Mat Sci & Engn, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Peoples R China

来源：

NANO LETTERS | 2022年 / 22卷 / 11期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

ultrascaled diode; flat interfaces; van der Waals integration; vertical devices; fast switching photodiode; SCHOTTKY; THICKNESS; EPILAYERS; GAN; TEMPERATURE; INTEGRATION; GROWTH;

D O I：

10.1021/acs.nanolett.2c00922

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Schottky diode is the fundamental building blocks for modern electronics and optoelectronics. Reducing the semiconductor layer thickness could shrink the vertical size of a Schottky diode, improving its speed and integration density. Here, we demonstrate a new approach to fabricate a Schottky diode with ultrashort physical length approaching atomic limit. By mechanically laminating prefabricated metal electrodes on both-sides of two-dimensional MoS2, the intrinsic metal-semiconductor interfaces can be well retained. As a result, we demonstrate the thinnest Schottky diode with a length of 2.6 nm and decent rectification behavior. Furthermore, with a diode length smaller than the semiconductor depletion length, the carrier transport mechanisms are investigated and explained by thickness-dependent and temperature-dependent electrical measurements. Our study not only pushes the scaling limit of a Schottky diode but also provides a general double-sided electrodes integration approach for other ultrathin vertical devices.

引用

页码：4429 / 4436

页数：8

共 39 条

[1] Carrier transport at the metal-MoS2 interface [J].