Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening

被引：37

作者：

Senz, V ^{[1
]}

Ihn, T

Heinzel, T

Ensslin, K

Dehlinger, G

Grützmacher, D

Gennser, U

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.85.4357

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We find that temperature dependent screening can quantitatively explain the metallic behavior of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behavior which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi liquid describes our system with its large interaction parameter r(s) approximate to 8.

引用

页码：4357 / 4360

页数：4

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