Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening

被引：37

作者：

Senz, V ^{[1
]}

Ihn, T

Heinzel, T

Ensslin, K

Dehlinger, G

Grützmacher, D

Gennser, U

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.85.4357

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We find that temperature dependent screening can quantitatively explain the metallic behavior of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behavior which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi liquid describes our system with its large interaction parameter r(s) approximate to 8.

引用

页码：4357 / 4360

页数：4

共 45 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LICCIARDELLO, DC ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676

[2]

Altshuler B.L., 1985, ELECT ELECT INTERACT

[3] Theory of metal-insulator transitions in gated semiconductors [J].

Altshuler, BL ;

Maslov, DL .

PHYSICAL REVIEW LETTERS, 1999, 82 (01) :145-148

[4] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].

ANDERSON, PW .

PHYSICAL REVIEW, 1958, 109 (05) :1492-1505

[5] Weak localization in semiconductor structures with strong spin-orbit coupling [J].

Averkiev, NS ;

Golub, LE ;

Pikus, GE .

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 1998, 86 (04) :780-789

[6] New quantum phase between the Fermi glass and the Wigner crystal in two dimensions [J].

Benenti, G ;

Waintal, X ;

Pichard, JL .

PHYSICAL REVIEW LETTERS, 1999, 83 (09) :1826-1829

[7] MAGNETORESISTANCE IN SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - EVIDENCE OF WEAK LOCALIZATION AND CORRELATION [J].

BISHOP, DJ ;

DYNES, RC ;

TSUI, DC .

PHYSICAL REVIEW B, 1982, 26 (02) :773-779

[8] OBSERVATION OF A NON-OHMIC HALL RESISTIVITY AT LOW-TEMPERATURES IN A TWO-DIMENSIONAL ELECTRON-GAS [J].

BISHOP, DJ ;

TSUI, DC ;

DYNES, RC .

PHYSICAL REVIEW LETTERS, 1981, 46 (05) :360-363

[9]

BISHOP DJ, 1980, PHYS REV LETT, V44, P1153, DOI 10.1103/PhysRevLett.44.1153

[10] Metal-insulator transition at B=0 in p-type SiGe [J].

Coleridge, PT ;

Williams, RL ;

Feng, Y ;

Zawadzki, P .

PHYSICAL REVIEW B, 1997, 56 (20) :12764-12767

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