Interplay of spin-orbit coupling and superconducting correlations in germanium telluride thin films

被引:19
作者
Narayan, Vijay [1 ]
Thuy-Anh Nguyen [1 ]
Mansell, Rhodri [1 ]
Ritchie, David [1 ]
Mussler, Gregor [2 ]
机构
[1] Univ Cambridge, Cavendish Lab, Dept Phys, JJ Thomson Ave, Cambridge CB3 0HE, England
[2] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2016年 / 10卷 / 03期
基金
英国工程与自然科学研究理事会;
关键词
GeTe; spin-orbit coupling; superconductivity; weak antilocalization; thin films; FIELD-ENHANCED SUPERCONDUCTIVITY; MAGNETIC-FIELD; NEGATIVE MAGNETORESISTANCE;
D O I
10.1002/pssr.201510430
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
There is much current interest in combining superconductivity and spin-orbit coupling in order to induce the topological superconductor phase and associated Majorana-like quasiparticles which hold great promise towards fault-tolerant quantum computing. Experimentally these effects have been combined by the proximity-coupling of superconducting leads and high spin-orbit materials such as InSb and InAs, or by controlled Cu-doping of topological insulators such as Bi2Se3. However, for practical purposes, a single-phase material which intrinsically displays both these effects is highly desirable. Here we demonstrate coexisting superconducting correlations and spin-orbit coupling in molecular-beam-epitaxy-grown thin films of GeTe. The former is evidenced by a precipitous low-temperature drop in the electrical resistivity which is quelled by a magnetic field, and the latter manifests as a weak antilocalisation (WAL) cusp in the magnetotransport. Our studies reveal several other intriguing features such as the presence of two-dimensional rather than bulk transport channels below 2 K, possible signatures of topological superconductivity, and unexpected hysteresis in the magnetotransport. Our work demonstrates GeTe to be a potential host of topological SC and Majorana-like excitations, and to be a versatile platform to develop quantum information device architectures.
引用
收藏
页码:253 / 259
页数:7
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