Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm

被引：67

作者：

Sukhotin, M ^{[1
]}

Brown, ER

Gossard, AC

Driscoll, D

Hanson, M

Maker, P

Muller, R

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 18期

关键词：

D O I：

10.1063/1.1567459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here the fabrication and demonstration of the photomixers made from In0.53Ga0.47As epitaxial material lattice-matched to InP. The material consists of layers of ErAs nanoparticles separated by InGaAs and compensated with Be to reduce the photocarrier lifetime to picosecond levels and to increase the resistivity to similar to100 Omega cm. Interdigitated-electrode and planar-antenna structures were fabricated by e-beam lithography and tested for dc electrical characteristics, 1.55-mum optical responsivity, and difference-frequency photomixing. The measured responsivity of 8 mA/W and photomixer output of >0.1 muW beyond 100 GHz are already comparable to GaAs photomixers and suggest that coherent THz generation is now feasible using the abundant 1.55-mum-semiconductor-laser and optical-fiber technologies. (C) 2003 American Institute of Physics.

引用

页码：3116 / 3118

页数：3

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