Technological and Design Limitations of Bipolar Power Transistors

被引：0

作者：

Strakos, Vladimir ^{[1
]}

机构：

[1] ONSemiconductor, Corp Res & Dev, Roznov Pr, Czech Republic

来源：

2009 32ND INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY | 2009年

关键词：

TRANSPORT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The clarification of effects having negative impact on power transistor performance. The review of demands on parameters of modern bipolar power transistors and main limitations both technological and design are given. Some concepts are proposed for solving of these problems.

引用

页码：14 / 16

页数：3

共 8 条

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