Temperature dependence of rectification and photovoltaic effects in regioregular poly(3-alkylthiophene) films at the Schottky junction with Al electrode

被引：7
作者：
Rikitake, K [1 ]
Pandey, S
Takashima, W
Kaneto, K
机构：
[1] Kyushu Inst Technol, Dept Comp Sci & Syst Engn, Iizuka, Fukuoka 8208502, Japan
[2] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Iizuka, Fukuoka 8208502, Japan
来源：
CURRENT APPLIED PHYSICS | 2003年 / 3卷 / 2-3期
关键词：
poly(3-hexylthiophene); Schottky junction; rectification; regioregularity; temperature dependence; photocurrent spectra;
D O I：
10.1016/S1567-1739(02)00225-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Current-voltage (I-V) characteristics of regioregular (head-tail) poly(3-hexylthiophene), HT-PHT films in the sandwich cell structure of Al/HT-PHT/Au have been studied as a function of temperature. The cells showed typical rectification characteristics with the ratio of more than 10(3), indicating the formation of the Schottky type junction at the interface of Al/HT-PHT. The temperature dependence of I-V characteristics at the forward biases are discussed with the bulk property of the HT-PHT. The reversed current and its characteristics are discussed taking the thermionic emission and diffusion models at the junctions of Al/HT-PHT into consideration. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：321 / 324
页数：4
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