SrTiO3 Recombination-Inhibiting Barrier Layer for Type II Dye-Sensitized Solar Cells

被引：62

作者：

Hod, Idan ^{[1
]}

Shalom, Menny ^{[1
]}

Tachan, Zion ^{[1
]}

Ruhle, Sven ^{[1
]}

Zaban, Arie ^{[1
]}

机构：

[1] Bar Ilan Univ, Dept Chem, Inst Nanotechnol & Adv Mat, IL-52900 Ramat Gan, Israel

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 21期

关键词：

ELECTRON-TRANSFER DYNAMICS; CHARGE-TRANSFER COMPLEXES; TIO2; NANOPARTICLES; NANOCRYSTALLINE TIO2; SURFACE MODIFICATION; EFFICIENCY; FILMS;

D O I：

10.1021/jp101097j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Type II dye-sensitized solar cells (DSSCs) differ from conventional DSSCs by their mechanism of light absorption and electron injection. Instead of photoexcitation of the dye, followed by electron injection to the semiconductor conduction band, in type II DSSCs, there is a direct electron injection from the HOMO level of the sensitizer into the conduction band of the semiconductor. The main drawback of such cells is their extremely rapid back-electron-transfer rate. Herein, we present a new approach for inhibiting back electron transfer in a catechol-sensitized type II DSSC using a thin layer barrier coating of SrTiO3 between the semiconductor and the sensitizer. A 70% improvement in charge collection efficiency is reported. A proposed mechanism for the operation of the SrTiO3 barrier layer is presented.

引用

页码：10015 / 10018

页数：4

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