Research of Single-Event Burnout in Power Planar VDMOSFETs by Localized Carrier Lifetime Control

被引：34

作者：

Yu, Cheng-Hao ^{[1
]}

Wang, Ying ^{[1
]}

Cao, Fei ^{[1
]}

Huang, Li-Lian ^{[1
]}

Wang, Yu-Ye ^{[1
]}

机构：

[1] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 01期

基金：

芬兰科学院;

关键词：

Low carrier lifetime control region (LCLCR); numerical simulation; power vertical double-diffused MOSFET (VDMOSFET); single-event burnout (SEB); BACKSIDE LASER; SEB; UMOSFETS; IRRADIATION; SIMULATION; MOSFETS; ENERGY; SEGR; IONS;

D O I：

10.1109/TED.2014.2365817

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power planar vertical double-diffused MOSFET (VDMOSFET) with localized carrier lifetime control. A low carrier lifetime control region (LCLCR) is introduced to accelerate the recombination rate of the generated holes caused by an ion's impact. The optimal localized range with LCLCR in epitaxial layer has been investigated. The SEB inhibition mechanism with LCLCR is analyzed and discussed. A VDMOSFET with localized LCLCR can operate like a normal VDMOSFET and can have improved SEB performance effectively. In addition, the leakage current density in breakdown characteristics of VDMOSFET is studied based on the variation of carrier lifetime.

引用

页码：143 / 148

页数：6

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