Characteristics of the ground-state lasing operation in V-groove quantum-wire lasers

被引:15
作者
Kim, TG [1 ]
Wang, XL
Suzuki, Y
Komori, K
Ogura, M
机构
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] New Energy & Ind Technol Dev Org, NEDO, Tokyo 1706027, Japan
关键词
gain-switched lasers; ground-state lasing operation; quantum-wire lasers; semiconductor lasers; short pulse generation; V-groove substrates;
D O I
10.1109/2944.865106
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Lasing from the ground subband transition, which has long been attempted in one-dimensional (1-D) structures, has been achieved for the first time with vertically stacked, AlGaAs-GaAs multiple quantum-wire (QWR) lasers, fabricated by flow-rate modulation epitaxy on V-groove substrates, Direct experimental evidence is provided by the consistency of the photon energies of the lasing and photoluminescence peaks, in the temperature range 4.5 K-300 K, It is further ensured by numerical calculation of the electronic subband energy states with the corresponding QWR structure. The lasers with cavity lengths of 350 mu m, show fundamental transverse mode, typical threshold current of 5 mA, an internal quantum efficiency of 18.5%, ultrahigh characteristic temperature T-o similar to 322 K above room temperature, and remarkably low wavelength-tuning rates of current (<0.012 nm/mA) and temperature (<0.19 nm/degrees C). Ultrafast lasing behaviors at the ground (n = 1) and the second (n = 2) transition of the QWR are also investigated in terms of the gain-switching method, using a characteristic of the wavelength shift from the n = 1 to the n. = 2 subband with shortening the cavity length.
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页码:511 / 521
页数:11
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