Modeling DC, RF and Noise behavior of GaN HEMTs using ASM-HEMT Compact Model

被引：0
|
作者：
Dasgupta, A. [1 ]
Ghosh, S. [1 ]
Ahsan, S. A. [1 ]
Chauhan, Y. S. [1 ]
Khandelwal, S. [2 ]
Defrance, N. [3 ]
机构：
[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur, Uttar Pradesh, India
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[3] Univ Lille, Inst Elect Microelect & Nanotechnol, Villeneuve Dascq, France
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC) | 2016年
关键词：
GaN; HEMT; compact model; noise; gate current;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.
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页数：4
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