Millisecond Annealing Junctions for Near-Scaling-Limit Bulk CMOS Using Raised Source/Drain Extensions

被引：2

作者：

Hane, Masami ^{[1
]}

机构：

[1] Albany NanoTech, IBM, Albany, NY USA

来源：

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2009年 / 19卷 / 01期

关键词：

D O I：

10.1149/1.3118931

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reviews an effective way to pursue further scaling of planar-bulk CMOSFETs featuring "effectively" shallow junctions in selective epitaxial growth of the raised source/drain extension (RSDext) regions processed with high-temperature millisecond annealing (MSA).

引用

页码：63 / 70

页数：8

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