Selective-Area Growth of InAs Nanowire Arrays on Si3N4/Si(111) by Molecular Beam Epitaxy

被引：0

作者：

Zhang, K. ^{[1
,2
]}

Ray, V. ^{[4
]}

Herrera-Fierro, P. ^{[4
]}

Sink, J. R. ^{[1
,2
]}

Toor, F. ^{[1
,2
,3
]}

Prineas, J. P. ^{[1
,2
,3
]}

机构：

[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[2] Univ Iowa, Opt Sci & Technol, Iowa City, IA 52242 USA

[3] Univ Iowa, Dept Elect & Comp Engn, Iowa City, IA 52242 USA

[4] Univ Michigan, Lurie Nanofabricat Facil, Ann Arbor, MI 48109 USA

来源：

QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIV | 2017年 / 10114卷

基金：

美国国家科学基金会;

关键词：

III-V nanowires; MBE; selective-area epitaxy; self-assembled growth; GAAS NANOWIRES; SI; CATALYST; SILICON;

D O I：

10.1117/12.2267737

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs nanowires directly integrated on Si platform show great promise in fabricating next generation mid-infrared optoelectronic devices. In this study we demonstrated the growth of catalyst-free, selective-area InAs nanowire arrays on electron beam patterned Si3N4/Si(111) by molecular beam epitaxy. Growth parameters were studied, and nanowire growth kinetic's dependence on patterned-mask hole diameter and interwire distance was investigated. Under certain growth conditions, nanowire diameter was found to be relatively independent of nanohole diameter and pitch. We also realized the growth of randomly-nucleated, self-assembled nanowires on Si (111) and investigated the temperature, flux influence on nanowire morphology.

引用

页数：6

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