Selective-Area Growth of InAs Nanowire Arrays on Si3N4/Si(111) by Molecular Beam Epitaxy

被引：0

作者：

Zhang, K. ^{[1
,2
]}

Ray, V. ^{[4
]}

Herrera-Fierro, P. ^{[4
]}

Sink, J. R. ^{[1
,2
]}

Toor, F. ^{[1
,2
,3
]}

Prineas, J. P. ^{[1
,2
,3
]}

机构：

[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[2] Univ Iowa, Opt Sci & Technol, Iowa City, IA 52242 USA

[3] Univ Iowa, Dept Elect & Comp Engn, Iowa City, IA 52242 USA

[4] Univ Michigan, Lurie Nanofabricat Facil, Ann Arbor, MI 48109 USA

来源：

QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIV | 2017年 / 10114卷

基金：

美国国家科学基金会;

关键词：

III-V nanowires; MBE; selective-area epitaxy; self-assembled growth; GAAS NANOWIRES; SI; CATALYST; SILICON;

D O I：

10.1117/12.2267737

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs nanowires directly integrated on Si platform show great promise in fabricating next generation mid-infrared optoelectronic devices. In this study we demonstrated the growth of catalyst-free, selective-area InAs nanowire arrays on electron beam patterned Si3N4/Si(111) by molecular beam epitaxy. Growth parameters were studied, and nanowire growth kinetic's dependence on patterned-mask hole diameter and interwire distance was investigated. Under certain growth conditions, nanowire diameter was found to be relatively independent of nanohole diameter and pitch. We also realized the growth of randomly-nucleated, self-assembled nanowires on Si (111) and investigated the temperature, flux influence on nanowire morphology.

引用

页数：6

共 50 条

[21] In situ ellipsometric measurement during growth of Ge on Si(111) by molecular beam epitaxy
Ikuta, T
Yoshioka, Y
Kamei, S
Hayashi, H
Shimura, T
Umeno, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4A): : 2262 - 2265
[22] Selective area growth of high quality GaN nanocolumns on Si(001) by plasma assisted molecular beam epitaxy
Bengoechea-Encabo, Ana
Albert, Steven
Niehle, Michael
Trampert, Achim
Calleja, Enrique
JOURNAL OF CRYSTAL GROWTH, 2023, 624
[23] Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B
Davydok, Anton
Rieger, Torsten
Biermanns, Andreas
Saqib, Muhammad
Grap, Thomas
Lepsa, Mihail Ion
Pietsch, Ullrich
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2013, 46 : 893 - 897
[24] Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy
MendezGarcia, VH
LopezLopez, M
HernandezCalderon, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1153 - L1156
[25] Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy
Karmann, S
Schenk, HPD
Kaiser, U
Fissel, A
Richter, W
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 228 - 232
[26] Growth of SiC layers on (111) Si by solid source molecular beam epitaxy
Pezoldt, J
Stauden, T
Cimalla, V
Ecke, G
Romanus, H
Eichhorn, G
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 251 - 254
[27] Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform
Chiba, Kohei
Tomioka, Katsuhiro
Yoshida, Akinobu
Motohisa, Junichi
AIP ADVANCES, 2017, 7 (12):
[28] Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy
Ristic, J
Sánchez-García, MA
Calleja, E
Pérez-Rodríguez, A
Serre, C
Romano-Rodríguez, A
Morante, JR
Koegler, VR
Skorupa, W
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 172 - 176
[29] Molecular beam epitaxy growth of CdTe on Si(211)
Chen, L
Wang, YZ
Wu, Y
Wu, J
Yu, MF
Qiao, YM
He, L
INFRARED COMPONENTS AND THEIR APPLICATIONS, 2005, 5640 : 684 - 691
[30] Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)
Gwo, S
Wu, CL
Chien, FSS
Yasuda, T
Yamasaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (6B): : 4368 - 4372

← 1 2 3 4 5 →